1 c3d08060a silicon carbide schottky diode z -rec ? rectifier features ? 600-volt schottky rectifer ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies (smps) ? boost diodes in pfc or dc/dc stages ? free wheeling diodes in inverter stages ? ac/dc converters package to-220-2 maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v i f continuous forward current 24 11 8 a t c =25?c t c =135?c t c =152?c fig. 3 i frm repetitive peak forward surge current 37.5 25.5 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave i fsm non-repetitive peak forward surge current 71 60 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave fig. 8 i f,max non-repetitive peak forward surge current 650 530 a t c =25?c, t p = 10 s, pulse t c =110?c, t p = 10 s, pulse fig. 8 p tot power dissipation 107 46.5 w t c =25?c t c =110?c fig. 4 t j , t stg operating junction and storage temperature -55 to +175 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw pin 1 pin 2 case part number package marking c3d08060a to-220-2 c3d08060 v rrm = 600 v i f ( t c =135?c) = 11 a q c = 20 nc c3d08060a rev. f, 10-2015
2 10 15 20 25 30 reverse leakage current, i rr (ma) t j = 175 c t j = 125 c t j = 75 c t = 25 c 0 5 10 0 100 200 300 400 500 600 700 800 900 1000 reverse leakage current, i reverse voltage, v r (v) t j = -55 c t j = 25 c electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.1 1.8 2.4 v i f = 8 a t j =25c i f = 8 a t j =175c fig. 1 i r reverse current 8.5 17 42.5 170 a v r = 600 v t j =25c v r = 600 v t j =175c fig. 2 q c total capacitive charge 20 nc v r = 400 v, i f = 8a d i /d t = 500 a/s t j = 25c fig. 5 c total capacitance 395 37 32 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz fig. 6 e c capacitance stored energy 3.0 j v r = 400 v fig. 7 note: this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit note r jc thermal resistance from junction to case 1.4 c/w fig. 9 typical performance figure 1. forward characteristics figure 2. reverse characteristics 0 200 400 600 800 1000 1200 8 10 12 14 16 18 20 foward current, i f (a) t j = -55 c t j = 25 c t j = 75 c t j = 175 c t j = 125 c 0 2 4 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 foward current, i foward voltage, v f (v) i f (a) v f (v) v r (v) i r ( m a) c3d08060a rev. f, 10-2015
3 30 40 50 60 70 80 i f (a) 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 10 20 25 50 75 100 125 150 175 t c (c) figure 3. current derating figure 4. power derating 40 60 80 100 120 p tot (w) 0 20 40 25 50 75 100 125 150 175 t c (c) figure 5. total capacitance charge vs. reverse voltage figure 6. capacitance vs. reverse voltage typical performance 10 15 20 25 30 capacitive charge, q c (nc) conditions: t j = 25 c 0 5 10 0 100 200 300 400 500 600 700 capacitive charge, q reverse voltage, v r (v) 150 200 250 300 350 400 450 capacitance (pf) conditions: t j = 25 c f test = 1 mhz v test = 25 mv 0 50 100 150 0 1 10 100 1000 capacitance (pf) reverse voltage, v r (v) i f(peak) (a) t c ?c t c ?c p tot (w) c (pf) v r (v) q c (nc) v r (v) c3d08060a rev. f, 10-2015
4 3 4 5 6 7 8 capacitance stored energy, e c ( j) 0 1 2 0 100 200 300 400 500 600 700 capacitance stored energy, e reverse voltage, v r (v) typical performance 100 1,000 i fsm (a) t j_initial = 25 c t j_initial = 110 c 10 10e-6 100e-6 1e-3 10e-3 time, t p (s) figure 7. capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) v r (v) e c ( m j) figure 9. transient thermal impedance 100e-3 1 thermal resistance ( o c/w) 0.5 0.3 0.1 0.05 0.02 singlepulse 1e-3 10e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 time, t p (s) 0.01 singlepulse thermal resistance (?c/w) t (sec) c3d08060a rev. f, 10-2015
5 pos inches millimeters min max min max a .381 .410 9.677 10.414 b .235 .255 5.969 6.477 c .100 .120 2.540 3.048 d .223 .337 5.664 8.560 d1 .457-.490 11.60-12.45 typ d2 .277-.303 typ 7.04-7.70 typ d3 .244-.252 typ 6.22-6.4 typ e .590 .615 14.986 15.621 e1 .302 .326 7.68 8.28 e2 .227 251 5.77 6.37 f .143 .153 3.632 3.886 g 1.105 1.147 28.067 29.134 h .500 .550 12.700 13.970 l .025 .036 .635 .914 m .045 .055 1.143 1.550 n .195 .205 4.953 5.207 p .165 .185 4.191 4.699 q .048 .054 1.219 1.372 s 3 6 3 6 t 3 6 3 6 u 3 6 3 6 v .094 .110 2.388 2.794 w .014 .025 .356 .635 x 3 5.5 3 5.5 y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 note: 1. dimension l, m, w apply for solder dip finish pin 1 pin 2 case recommended solder pad layout part number package marking c3d08060a to-220-2 c3d08060 to-220-2 note: recommended soldering profles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering package dimensions package to-220-2 c3d08060a rev. f, 10-2015
6 6 diode model v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c vf t = v t + if * r t v t = 0.95 + (t j * -1.2*10 -3 ) r t = 0.054 + (t j * 5.5*10 -4 ) c3d08060a rev. f, 10-2015 copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the thresh - old limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your wolfspeed representative or from the product ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree represen - tative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes ? cree sic schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes ? schottky diode spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 ? sic mosfet and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i related links
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